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Transistor with vertical structure, "ballistic" transistors in particular, are best suited for various SHF-devices when working in high-power units in analogue and digital circuits. The newly developed technology allows the formation of a gate without the use of electron lithography and photolithography of super-high resolution. The technology can be used with conventional production equipment, and drastically reduces the number of operations. It also allows for the production of discrete and integral transistors.

The technology enables the production of powerful discrete and integral field-effect transistors (5-15W) for frequencies of 3-15 GHz, and can serve as a basis for creating totally new series of super-power microcircuits (digital and analogue) in the SHF-range. Incorporating special, new electrophysical properties (slope or rate of change of the run-off-gate characteristics, resistance, impedance), vertical transistors can serve as a basis for developing new microcircuits for digital and analogue devices.

The technology can be applied in phased arrays (3-9.5GHz) radar systems; satellite communication systems; oscillographs, frequency meters, multimeters etc.; digital devices with picosecond pulses.

Apart from discrete devices, the technology makes it possible to produce vertical transistors as parts of integrated circuits -both digital and analogue, with the frequency range of up to 25GHz. Other areas of application are currently being developed and tested.